中圖分類號(hào)：TN402 文獻(xiàn)標(biāo)志碼：A DOI: 10.16157/j.issn.0258-7998.245686 中文引用格式： 王金龍,，孫鍇. 針對(duì)總劑量效應(yīng)4H-SiC功率器件的加固設(shè)計(jì)方法[J]. 電子技術(shù)應(yīng)用，2025,，51(2)：29-35. 英文引用格式： Wang Jinlong,，Sun Kai. Reinforcement design method for 4H-SiC power devices targeting total dose effect[J]. Application of Electronic Technique，2025,，51(2)：29-35.
Reinforcement design method for 4H-SiC power devices targeting total dose effect
Wang Jinlong1,，Sun Kai2
1.College of Integrated Circuits， University of Chinese Academy of Sciences,； 2.Institute of Microelectronics of the Chinese Academy of Sciences
Abstract： This article introduces the impact of total dose effect on 4H-SiC power devices and corresponding reinforcement schemes. Firstly, the electrical characteristics of 4H-SiC power devices and the radiation environment they face during operation were introduced. Then, based on the impact of radiation on device characteristics, radiation defects were identified and degradation mechanisms were established. Next, the irradiation characteristics of unipolar and bipolar devices were analyzed. Finally, reinforcement design methods were proposed from the aspects of process, device structure, layout, and circuit to address the degradation mechanism of devices in irradiation environments.
Key words : 4H-SiC,；TID；circuit reinforcement
引言
SiC作為寬禁帶半導(dǎo)體材料,，與傳統(tǒng)半導(dǎo)體材料Si相比具有更高的電子遷移率,、更高的擊穿電場(chǎng)、更高的熱導(dǎo)率和更低的介電常數(shù)等優(yōu)點(diǎn),。近幾年來(lái)SiC逐漸取代Si材料成為耐高溫,、高壓、低功耗和更高的開(kāi)關(guān)速度的優(yōu)異材料,。在SiC功率器件逐漸取代Si器件的趨勢(shì)下,，其應(yīng)用越來(lái)越廣泛，這意味著其需要在各種各樣的環(huán)境下穩(wěn)定工作,，因此惡劣環(huán)境下的可靠性研究至關(guān)重要,。SiC功率器件在航天方面的應(yīng)用越來(lái)越多，然而在太空環(huán)境下由于有大量的宇宙射線,，宇宙射線會(huì)射入半導(dǎo)體材料中積累大量的電荷,，產(chǎn)生總劑量效應(yīng)導(dǎo)致器件功能下降甚至失效，因此在輻照環(huán)境下研究半導(dǎo)體器件的可靠性至關(guān)重要,。市場(chǎng)上出現(xiàn)了新型 SiC 功率元件：結(jié)勢(shì)壘肖特基(JBS)二極管和場(chǎng)效應(yīng)晶體管（MOSFET）,、結(jié)型場(chǎng)效應(yīng)晶體管(JFET)和PiN二極管，然而,，有關(guān)其抗輻射性的信息非常缺乏,。因此本文來(lái)探究其抗輻射的原理。4H-SiC材料與傳統(tǒng)的Si材料的特性比較如表1所示[1]。
